Infineon IR2111STRPBF, Half Bridge, 420 mA 8-Pin 600V, SOIC
- RS-stocknr.:
- 258-3930
- Fabrikantnummer:
- IR2111STRPBF
- Fabrikant:
- Infineon
Subtotaal (1 rol van 2500 eenheden)*
€ 1.642,50
(excl. BTW)
€ 1.987,50
(incl. BTW)
GRATIS bezorging voor bestellingen vanaf € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 10 maart 2027
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 2500 + | € 0,657 | € 1.642,50 |
*prijsindicatie
- RS-stocknr.:
- 258-3930
- Fabrikantnummer:
- IR2111STRPBF
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en conformiteit
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 420mA | |
| Pin Count | 8 | |
| Package Type | SOIC | |
| Fall Time | 40ns | |
| Driver Type | Half Bridge | |
| Rise Time | 130ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IR2111(S) & (PbF) | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 420mA | ||
Pin Count 8 | ||
Package Type SOIC | ||
Fall Time 40ns | ||
Driver Type Half Bridge | ||
Rise Time 130ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series IR2111(S) & (PbF) | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set dead time
High side output in phase with input
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