Infineon, Half Bridge, 420 mA 8-Pin 600 V, SOIC
- RS Stock No.:
- 258-3930
- Mfr. Part No.:
- IR2111STRPBF
- Brand:
- Infineon
Subtotal (1 reel of 2500 units)*
€ 1.545,00
(exc. VAT)
€ 1.870,00
(inc. VAT)
GRATIS bezorging voor bestellingen vanaf € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 11 mei 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 + | € 0,618 | € 1.545,00 |
*price indicative
- RS Stock No.:
- 258-3930
- Mfr. Part No.:
- IR2111STRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 420mA | |
| Pin Count | 8 | |
| Fall Time | 40ns | |
| Package Type | SOIC | |
| Driver Type | Half Bridge | |
| Rise Time | 130ns | |
| Minimum Supply Voltage | 10V | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Series | IR2111(S) & (PbF) | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 420mA | ||
Pin Count 8 | ||
Fall Time 40ns | ||
Package Type SOIC | ||
Driver Type Half Bridge | ||
Rise Time 130ns | ||
Minimum Supply Voltage 10V | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Series IR2111(S) & (PbF) | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Internal dead time is provided to avoid shoot-through in the output half-bridge. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.
Gate drive supply range from 10 to 20V
Under voltage lockout for both channels
CMOS Schmitt-triggered inputs with pull-down
Matched propagation delay for both channels
Internally set dead time
High side output in phase with input