- RS-stocknr.:
- 896-2612
- Fabrikantnummer:
- TRS8E65C,S1AQ(S
- Fabrikant:
- Toshiba
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- RS-stocknr.:
- 896-2612
- Fabrikantnummer:
- TRS8E65C,S1AQ(S
- Fabrikant:
- Toshiba
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
Silicon Carbide (SiC) Schottky Diode, Toshiba
A range of Silicon Carbide (SiC) Schottky barrier diodes from Toshiba suitable for high-efficiency, high speed switching applications.
Low-loss and high-efficiency power conversion
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Low leakage current
High-speed switching
Recovery characteristics independent of temperature
Diodes and Rectifiers, Toshiba
Specificaties
Kenmerk | Waarde |
---|---|
Mounting Type | Through Hole |
Package Type | TO-220 |
Maximum Continuous Forward Current | 8A |
Peak Reverse Repetitive Voltage | 650V |
Diode Configuration | Single |
Diode Type | Schottky |
Pin Count | 2 |
Maximum Forward Voltage Drop | 1.7V |
Number of Elements per Chip | 1 |
Diode Technology | SiC Schottky |
Peak Non-Repetitive Forward Surge Current | 40A |