- RS-stocknr.:
- 209-8126
- Fabrikantnummer:
- VS-C20ET07T-M3
- Fabrikant:
- Vishay
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Toegevoegd
Prijs Per stuk (in een tube 50)
€ 6,68
(excl. BTW)
€ 8,08
(incl. BTW)
Aantal stuks | Per stuk | Per tube* |
50 - 50 | € 6,68 | € 334,00 |
100 - 200 | € 6,012 | € 300,60 |
250 + | € 5,678 | € 283,90 |
*prijsindicatie |
- RS-stocknr.:
- 209-8126
- Fabrikantnummer:
- VS-C20ET07T-M3
- Fabrikant:
- Vishay
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Vishay 650 V Power SiC Merged PIN Schottky Diode with forward Current of 20A.
Majority carrier diode using Schottky technology on SiC wide band gap material
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
Positive VF temperature coefficient for easy paralleling
Virtually no recovery tail and no switching losses
Temperature invariant switching behaviour
175 °C maximum operating junction temperature
MPS structure for high ruggedness to forward current surge events
Specificaties
Kenmerk | Waarde |
---|---|
Mounting Type | Through Hole |
Package Type | 2L TO-220AC |
Maximum Continuous Forward Current | 20A |
Peak Reverse Repetitive Voltage | 650V |
Diode Configuration | Single |
Rectifier Type | Schottky Diode |
Diode Type | SiC Schottky |
Pin Count | 3 |
Diode Technology | SiC Schottky |