P-Channel MOSFET, 3 A, 20 V, 6-Pin DSBGA Texas Instruments CSD25304W1015T

Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service

Datasheets

MOSFET Transistors, Texas Instruments

Kenmerk	Waarde
Channel Type	P
Maximum Continuous Drain Current	3 A
Maximum Drain Source Voltage	20 V
Package Type	DSBGA
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	92 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	1.15V
Minimum Gate Threshold Voltage	0.55V
Maximum Power Dissipation	750 mW
Transistor Configuration	Single
Maximum Gate Source Voltage	-8 V, +8 V
Length	1mm
Width	1.5mm
Transistor Material	Si
Typical Gate Charge @ Vgs	3.3 nC @ 4.5 V
Number of Elements per Chip	1
Maximum Operating Temperature	+150 °C
Forward Diode Voltage	1V
Minimum Operating Temperature	-55 °C
Series	NexFET