N-Channel MOSFET, 61 A, 250 V, 3-Pin TO-220 Infineon IPP220N25NFDAKSA1
- RS-stocknr.:
- 898-6983
- Fabrikantnummer:
- IPP220N25NFDAKSA1
- Fabrikant:
- Infineon
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 03/05/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (in een verpakking 2)
€ 6,39
(excl. BTW)
€ 7,73
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 2 - 8 | € 6,39 | € 12,78 |
| 10 - 18 | € 5,56 | € 11,12 |
| 20 - 48 | € 5,245 | € 10,49 |
| 50 - 98 | € 4,86 | € 9,72 |
| 100 + | € 4,47 | € 8,94 |
| *prijsindicatie | ||
- RS-stocknr.:
- 898-6983
- Fabrikantnummer:
- IPP220N25NFDAKSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Vrijgesteld
Productomschrijving
Infineon OptiMOS™ FD Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 61 A |
| Maximum Drain Source Voltage | 250 V |
| Series | OptiMOS FD |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 22 mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation | 300 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |
| Maximum Operating Temperature | +175 °C |
| Width | 4.57mm |
| Typical Gate Charge @ Vgs | 65 nC @ 10 V |
| Length | 10.36mm |
| Forward Diode Voltage | 1.2V |
| Minimum Operating Temperature | -55 °C |
| Height | 15.95mm |