N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707GTRPBF

RS-stocknr.:: 865-5774
Fabrikantnummer:: IRF8707GTRPBF
Fabrikant:: Infineon

N-Channel MOSFET, 11 A, 30 V, 8-Pin SOIC Infineon IRF8707GTRPBF

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RS-stocknr.:: 865-5774
Fabrikantnummer:: IRF8707GTRPBF
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Land van herkomst:: CN

Productomschrijving

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	11 A
Maximum Drain Source Voltage	30 V
Package Type	SOIC
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	17.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	2.5 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Number of Elements per Chip	1
Width	4mm
Typical Gate Charge @ Vgs	6.2 nC @ 4.5 V
Length	5mm
Minimum Operating Temperature	-55 °C
Series	HEXFET
Height	1.5mm

RS-stocknr.:: 865-5774
Fabrikantnummer:: IRF8707GTRPBF
Fabrikant:: Infineon