IRF5806TRPBF P-Channel MOSFET, 4 A, 20 V HEXFET, 6-Pin TSOP Infineon

  • RS-stocknr. 830-3509
  • Fabrikantnummer IRF5806TRPBF
  • Fabrikant Infineon
Datasheets
Wetgeving en conformiteit
Conform
Land van herkomst: MY
Productomschrijving

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type P
Maximum Continuous Drain Current 4 A
Maximum Drain Source Voltage 20 V
Package Type TSOP
Mounting Type Surface Mount
Pin Count 6
Maximum Drain Source Resistance 147 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 1.2V
Minimum Gate Threshold Voltage 0.45V
Maximum Power Dissipation 2 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Height 1mm
Series HEXFET
Maximum Operating Temperature +150 °C
Transistor Material Si
Length 3.1mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 8.3 nC @ 4.5 V
Width 1.7mm
5900 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Pack of 25)
0,348
(excl. BTW)
0,421
(incl. BTW)
Aantal stuks
Per stuk
Per pak*
25 - 225
0,348 €
8,70 €
250 - 475
0,198 €
4,95 €
500 +
0,191 €
4,775 €
*prijsindicatie
Verpakkingsopties
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