Dual N/P-Channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH onsemi MCH6660-TL-H
- RS-stocknr.:
- 791-9493
- Fabrikantnummer:
- MCH6660-TL-H
- Fabrikant:
- onsemi
Tijdelijk niet op voorraad – voor levertijd of een alternatief product neem contact op via Live Chat of zoek een vergelijkbaar product op de website.
Toegevoegd
Prijs Per stuk (op een tape 20)
€ 0,372
(excl. BTW)
€ 0,45
(incl. BTW)
| Aantal stuks | Per stuk | Per tape* |
| 20 - 20 | € 0,372 | € 7,44 |
| 40 - 180 | € 0,306 | € 6,12 |
| 200 - 380 | € 0,29 | € 5,80 |
| 400 - 780 | € 0,274 | € 5,48 |
| 800 + | € 0,258 | € 5,16 |
| *prijsindicatie | ||
- RS-stocknr.:
- 791-9493
- Fabrikantnummer:
- MCH6660-TL-H
- Fabrikant:
- onsemi
Datasheets
Wetgeving en conformiteit
Productomschrijving
Dual N/P-Channel MOSFET, ON Semiconductor
The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.
MOSFET Transistors, ON Semiconductor
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.5 A, 2 A |
| Maximum Drain Source Voltage | 20 V |
| Package Type | MCPH |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 136 mΩ, 266 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 1.3V |
| Maximum Power Dissipation | 800 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -10 V, +10 V |
| Width | 1.6mm |
| Number of Elements per Chip | 2 |
| Typical Gate Charge @ Vgs | 1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V |
| Length | 2mm |
| Maximum Operating Temperature | +150 °C |
| Transistor Material | Si |
| Height | 0.85mm |