- RS-stocknr.:
- 753-2999
- Fabrikantnummer:
- IPB60R099CPATMA1
- Fabrikant:
- Infineon
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Alternatief
Dit product is momenteel niet beschikbaar. Hierbij onze aanbeveling voor een alternatief product.
- RS-stocknr.:
- 753-2999
- Fabrikantnummer:
- IPB60R099CPATMA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Infineon CoolMOS™CP Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 31 A |
Maximum Drain Source Voltage | 650 V |
Package Type | D2PAK (TO-263) |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 99 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.5V |
Minimum Gate Threshold Voltage | 2.5V |
Maximum Power Dissipation | 255 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Width | 9.45mm |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 60 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Transistor Material | Si |
Length | 10.31mm |
Minimum Operating Temperature | -55 °C |
Height | 4.57mm |
Series | CoolMOS CP |
- RS-stocknr.:
- 753-2999
- Fabrikantnummer:
- IPB60R099CPATMA1
- Fabrikant:
- Infineon