N-Channel MOSFET, 190 mA, 800 V, 3 + Tab-Pin SOT-223 Infineon BSP300H6327XUSA1
- RS-stocknr.:
- 752-8211
- Fabrikantnummer:
- BSP300H6327XUSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 752-8211
- Fabrikantnummer:
- BSP300H6327XUSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 190 mA |
| Maximum Drain Source Voltage | 800 V |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 + Tab |
| Maximum Drain Source Resistance | 20 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Width | 3.5mm |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Transistor Material | Si |
| Height | 1.6mm |
| Series | SIPMOS |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 752-8211
- Fabrikantnummer:
- BSP300H6327XUSA1
- Fabrikant:
- Infineon