- RS-stocknr.:
- 541-1663
- Fabrikantnummer:
- IRFU9110PBF
- Fabrikant:
- Vishay
Dit product is momenteel niet beschikbaar voor nabestelling.
We hebben dit product helaas niet op voorraad en het is op dit moment niet beschikbaar voor nabestelling.
Prijs Per stuk
€ 1,49
(excl. BTW)
€ 1,80
(incl. BTW)
Aantal stuks | Per stuk |
1 - 9 | € 1,49 |
10 - 49 | € 1,34 |
50 - 99 | € 1,27 |
100 - 249 | € 1,11 |
250 + | € 1,02 |
- RS-stocknr.:
- 541-1663
- Fabrikantnummer:
- IRFU9110PBF
- Fabrikant:
- Vishay
Wetgeving en conformiteit
Productomschrijving
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D2PAK (TO-263) is a surface mount power package. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
Dynamic dV/dt rating
Repetitive avalanche rated
Repetitive avalanche rated
MOSFET Transistors, Vishay Semiconductor
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 3.1 A |
Maximum Drain Source Voltage | 100 V |
Package Type | IPAK (TO-251) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.2 Ω |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 2.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Number of Elements per Chip | 1 |
Transistor Material | Si |
Width | 2.38mm |
Maximum Operating Temperature | +150 °C |
Length | 6.73mm |
Typical Gate Charge @ Vgs | 8.7 nC @ 10 V |
Height | 6.22mm |
Minimum Operating Temperature | -55 °C |