IRFZ44NPBF N-Channel MOSFET, 49 A, 55 V HEXFET, 3-Pin TO-220AB Infineon

  • RS-stocknr. 540-9777
  • Fabrikantnummer IRFZ44NPBF
  • Fabrikant Infineon
Datasheets
Wetgeving en conformiteit
Conform
Productomschrijving

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 49 A
Maximum Drain Source Voltage 55 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 17.5 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 4V
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 94 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Minimum Operating Temperature -55 °C
Height 8.77mm
Series HEXFET
Transistor Material Si
Typical Gate Charge @ Vgs 63 nC @ 10 V
Maximum Operating Temperature +175 °C
67 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
1560 op voorraad - levertijd is 1 werkdag(en) (UK-voorraad)
Prijs Each
2,18
(excl. BTW)
2,64
(incl. BTW)
Aantal stuks
Per stuk
1 - 19
2,18 €
20 - 24
0,65 €
25 +
0,59 €
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