N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 Infineon BSP295H6327XTSA1
- RS-stocknr.:
- 445-2269
- Fabrikantnummer:
- BSP295H6327XTSA1
- Fabrikant:
- Infineon
250 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
425 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Per stuk (in een verpakking 5)
€ 0,844
(excl. BTW)
€ 1,021
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 45 | € 0,844 | € 4,22 |
| 50 - 120 | € 0,752 | € 3,76 |
| 125 - 245 | € 0,70 | € 3,50 |
| 250 - 495 | € 0,65 | € 3,25 |
| 500 + | € 0,598 | € 2,99 |
| *prijsindicatie | ||
- RS-stocknr.:
- 445-2269
- Fabrikantnummer:
- BSP295H6327XTSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 1.8 A |
| Maximum Drain Source Voltage | 60 V |
| Series | SIPMOS |
| Package Type | SOT-223 |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 300 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2V |
| Minimum Gate Threshold Voltage | 0.8V |
| Maximum Power Dissipation | 1.8 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Length | 6.5mm |
| Width | 3.5mm |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V |
| Height | 1.6mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 445-2269
- Fabrikantnummer:
- BSP295H6327XTSA1
- Fabrikant:
- Infineon