- RS-stocknr.:
- 354-5770
- Fabrikantnummer:
- BSS139H6327XTSA1
- Fabrikant:
- Infineon
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 354-5770
- Fabrikantnummer:
- BSS139H6327XTSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Niet conform
Productomschrijving
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 100 mA |
Maximum Drain Source Voltage | 250 V |
Package Type | SOT-23 |
Mounting Type | Surface Mount |
Pin Count | 3 |
Maximum Drain Source Resistance | 14 Ω |
Channel Mode | Depletion |
Maximum Gate Threshold Voltage | 1V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 360 mW |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Length | 2.9mm |
Transistor Material | Si |
Width | 1.3mm |
Maximum Operating Temperature | +150 °C |
Number of Elements per Chip | 1 |
Typical Gate Charge @ Vgs | 2.3 nC @ 5 V |
Series | SIPMOS |
Height | 1mm |
Minimum Operating Temperature | -55 °C |