- RS-stocknr.:
- 215-2578
- Fabrikantnummer:
- IRF6668TRPBF
- Fabrikant:
- Infineon
- RS-stocknr.:
- 215-2578
- Fabrikantnummer:
- IRF6668TRPBF
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Infineon HEXFET® Power MOSFET has 80V maximum drain source voltage in a DirectFET MZ package rated at 55 amperes optimized with low on resistance. The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapour phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Ideal for High Performance Isolated Converter Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 55 A |
Maximum Drain Source Voltage | 80 V |
Package Type | DirectFET ISOMETRIC |
Series | HEXFET |
Mounting Type | Surface Mount |
Pin Count | 7 |
Maximum Drain Source Resistance | 0.015 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4.9V |
Number of Elements per Chip | 1 |
Transistor Material | Si |