N-Channel MOSFET, 33 A, 600 V, 3-Pin TO-220 STMicroelectronics STO67N60DM6
- RS-stocknr.:
- 206-6067
- Fabrikantnummer:
- STO67N60DM6
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 23/04/2025, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (op een rol 1800)
€ 4,038
(excl. BTW)
€ 4,886
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 1800 + | € 4,038 | € 7.268,40 |
| *prijsindicatie | ||
- RS-stocknr.:
- 206-6067
- Fabrikantnummer:
- STO67N60DM6
- Fabrikant:
- STMicroelectronics
Datasheets
Wetgeving en conformiteit
Productomschrijving
The STMicroelectronics high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviours available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.
Fast-recovery body diode
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Lower RDS(on) per area vs previous generation
Low gate charge, input capacitance and resistance
100% avalanche tested
Extremely high dv/dt ruggedness
Zener-protected
Excellent switching performance thanks to the extra driving source pin
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 33 A |
| Maximum Drain Source Voltage | 600 V |
| Series | STO67N60DM6 |
| Package Type | TO-220 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 59 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 25V |
| Number of Elements per Chip | 1 |
| Transistor Material | Si |