N-Channel MOSFET, 16 A, 80 V, 8-Pin PowerPAK 1212 Vishay SIS108DN-T1-GE3

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Datasheets

N-Channel 80 V (D-S) MOSFET

TrenchFET® Gen IV power MOSFET
Tuned for the lowest RDS x Qoss FOM

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	16 A
Maximum Drain Source Voltage	80 V
Package Type	PowerPAK 1212
Mounting Type	Surface Mount
Pin Count	8
Maximum Drain Source Resistance	44 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	24 W
Transistor Configuration	Single
Maximum Gate Source Voltage	±20 V
Typical Gate Charge @ Vgs	9.2 nC @ 10 V
Number of Elements per Chip	1
Width	3.15mm
Maximum Operating Temperature	+150 °C
Length	3.15mm
Minimum Operating Temperature	-55 °C
Height	1.07mm
Forward Diode Voltage	1.2V