IRFBE30PBF N-Channel MOSFET, 4.1 A, 800 V, 3-Pin TO-220AB Vishay

  • RS-stocknr. 178-0818
  • Fabrikantnummer IRFBE30PBF
  • Fabrikant Vishay
Datasheets
Wetgeving en conformiteit
Conform
Productomschrijving

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 4.1 A
Maximum Drain Source Voltage 800 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Maximum Drain Source Resistance 3 Ω
Channel Mode Enhancement
Minimum Gate Threshold Voltage 2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 10.41mm
Typical Gate Charge @ Vgs 78 nC @ 10 V
Height 9.01mm
Width 4.7mm
Minimum Operating Temperature -55 °C
Maximum Operating Temperature +150 °C
Transistor Material Si
300 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (In a Tube of 50)
1,311
(excl. BTW)
1,586
(incl. BTW)
Aantal stuks
Per stuk
Per tube*
50 - 50
1,311 €
65,55 €
100 - 200
1,272 €
63,60 €
250 - 450
1,232 €
61,60 €
500 +
1,18 €
59,00 €
*prijsindicatie