- RS-stocknr.:
- 172-3392
- Fabrikantnummer:
- FFSP2065A
- Fabrikant:
- ON Semiconductor
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 172-3392
- Fabrikantnummer:
- FFSP2065A
- Fabrikant:
- ON Semiconductor
Datasheets
Wetgeving en conformiteit
Productomschrijving
ON Semiconductor SiC Schottky Diodes
This range of Silicon Carbide (SiC) Schottky Diodes from ON Semiconductor use a completely new technology providing superior switching performance as well as higher reliability to silicon. No reverse recovery current and temperature independent switching characteristics along with excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include the highest efficiency, even faster operating frequency, greater power density and reduced EMI topped off with reduced system size and overall cost.
System benefits include the highest efficiency, even faster operating frequency, greater power density and reduced EMI topped off with reduced system size and overall cost.
Features & Benefits
Max Junction Temperature 175 °C
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Suitable for applications such as PFC, Industrial Power, Solar, EV Charger, UPS and Welding
High Surge Current Capacity
Positive Temperature Coefficient
No Reverse Recovery / No Forward Recovery
Suitable for applications such as PFC, Industrial Power, Solar, EV Charger, UPS and Welding
Specificaties
Kenmerk | Waarde |
---|---|
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 2 + Tab |
Maximum Power Dissipation | 187 W |
Transistor Configuration | Single |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +175 °C |
Transistor Material | SiC |
Length | 10.36mm |
Width | 4.67mm |
Height | 15.21mm |
Forward Diode Voltage | 2.4V |
Minimum Operating Temperature | -55 °C |