N-Channel MOSFET, 3 A, 800 V, 3-Pin IPAK Taiwan Semi TSM3N80CH C5G
- RS-stocknr.:
- 171-3709
- Fabrikantnummer:
- TSM3N80CH C5G
- Fabrikant:
- Taiwan Semiconductor
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- RS-stocknr.:
- 171-3709
- Fabrikantnummer:
- TSM3N80CH C5G
- Fabrikant:
- Taiwan Semiconductor
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Taiwan Semiconductor 800V, 3A, 4. 3Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode. It is generally used in power Supply and lighting applications.
Low RDS(ON) 3.3Ω (Typ.)
Low gate charge typical @ 19nC (Typ.)
Low Crss typical @ 10.2pF (Typ.)
Improved dv/dt capability
Operating temperature ranges between -55 °C to +150 °C
94W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low gate charge typical @ 19nC (Typ.)
Low Crss typical @ 10.2pF (Typ.)
Improved dv/dt capability
Operating temperature ranges between -55 °C to +150 °C
94W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 3 A |
| Maximum Drain Source Voltage | 800 V |
| Package Type | TO-251 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 4.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 94 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Length | 6.5mm |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Maximum Operating Temperature | +150 °C |
| Width | 2.3mm |
| Forward Diode Voltage | 1.5V |
| Minimum Operating Temperature | -55 °C |
| Height | 7mm |
- RS-stocknr.:
- 171-3709
- Fabrikantnummer:
- TSM3N80CH C5G
- Fabrikant:
- Taiwan Semiconductor