N-Channel MOSFET, 6 A, 600 V, 3-Pin DPAK Taiwan Semi TSM6N60CP ROG
- RS-stocknr.:
- 171-3691
- Fabrikantnummer:
- TSM6N60CP ROG
- Fabrikant:
- Taiwan Semiconductor
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- RS-stocknr.:
- 171-3691
- Fabrikantnummer:
- TSM6N60CP ROG
- Fabrikant:
- Taiwan Semiconductor
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Taiwan Semiconductor 600V, 6A, 1. 25Ω, 3 pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
High power and current handing capability.
Low RDS(ON) 1.25Ω (Max.)
Low gate charge typical @ 20.7nC (Typ.)
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
89W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Low RDS(ON) 1.25Ω (Max.)
Low gate charge typical @ 20.7nC (Typ.)
RoHS compliant
Operating temperature ranges between -55 °C to +150 °C
89W max. power dissipation
Gate threshold voltage ranges between 2V-4V
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 6 A |
| Maximum Drain Source Voltage | 600 V |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 1.25 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 4V |
| Minimum Gate Threshold Voltage | 2V |
| Maximum Power Dissipation | 89 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Length | 6.5mm |
| Typical Gate Charge @ Vgs | 20.7 nC @ 10 V |
| Number of Elements per Chip | 1 |
| Width | 5.8mm |
| Maximum Operating Temperature | +150 °C |
| Forward Diode Voltage | 1.5V |
| Height | 2.3mm |
- RS-stocknr.:
- 171-3691
- Fabrikantnummer:
- TSM6N60CP ROG
- Fabrikant:
- Taiwan Semiconductor