Dual N-Channel MOSFET, 300 mA, 60 V, 6-Pin SOT-363 Toshiba SSM6N7002KFU
- RS-stocknr.:
- 171-2523
- Fabrikantnummer:
- SSM6N7002KFU
- Fabrikant:
- Toshiba
2500 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een verpakking 100)
€ 0,06
(excl. BTW)
€ 0,07
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 100 - 400 | € 0,06 | € 6,00 |
| 500 - 900 | € 0,052 | € 5,20 |
| 1000 + | € 0,048 | € 4,80 |
| *prijsindicatie | ||
- RS-stocknr.:
- 171-2523
- Fabrikantnummer:
- SSM6N7002KFU
- Fabrikant:
- Toshiba
Datasheets
Wetgeving en conformiteit
- Land van herkomst:
- TH
Productomschrijving
High-Speed Switching
Low drain-source on-resistance
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V)
RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V)
RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 300 mA |
| Maximum Drain Source Voltage | 60 V |
| Package Type | SOT-363 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 1.75 Ω |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 2.1V |
| Minimum Gate Threshold Voltage | 1.1V |
| Maximum Power Dissipation | 500 mW |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 0.39 nC @ 4.5 V |
| Width | 1.25mm |
| Length | 2mm |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q101 |
| Height | 0.9mm |
| Forward Diode Voltage | 1.1V |
- RS-stocknr.:
- 171-2523
- Fabrikantnummer:
- SSM6N7002KFU
- Fabrikant:
- Toshiba