N-Channel MOSFET, 180 A, 100 V, 7 + Tab-Pin D2PAK Infineon IPB017N10N5ATMA1
- RS-stocknr.:
- 170-2305
- Fabrikantnummer:
- IPB017N10N5ATMA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 170-2305
- Fabrikantnummer:
- IPB017N10N5ATMA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
Productomschrijving
The Infineon IPB017N10N5 is optiMOS 100V power MOSFET in D2PAK 7pin package with 22% lower RDS(on). Its especially designed for synchronous rectification in telecom blocks including Or-ing, hot swap and battery protection as well as for server power supply applications.
Optimized for synchronous rectification
Ideal for high switching frequency
Output capacitance reduction of up to 44%
Ideal for high switching frequency
Output capacitance reduction of up to 44%
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 180 A |
| Maximum Drain Source Voltage | 100 V |
| Series | IPB017N10N5 |
| Package Type | TO-263 |
| Mounting Type | Surface Mount |
| Pin Count | 7 + Tab |
| Maximum Drain Source Resistance | 2.2 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3.8V |
| Minimum Gate Threshold Voltage | 2.2V |
| Maximum Power Dissipation | 375 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | 20 V |
| Number of Elements per Chip | 1 |
| Width | 11.05mm |
| Maximum Operating Temperature | +175 °C |
| Length | 10.31mm |
| Typical Gate Charge @ Vgs | 168 nC @ 10 V |
| Height | 4.57mm |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.2V |
- RS-stocknr.:
- 170-2305
- Fabrikantnummer:
- IPB017N10N5ATMA1
- Fabrikant:
- Infineon