- RS-stocknr.:
- 170-2267
- Fabrikantnummer:
- SPA20N60C3XKSA1
- Fabrikant:
- Infineon
- RS-stocknr.:
- 170-2267
- Fabrikantnummer:
- SPA20N60C3XKSA1
- Fabrikant:
- Infineon
Datasheets
Wetgeving en conformiteit
N.v.t.
Productomschrijving
Infineon MOSFET
The Infineon through-hole mount N-channel MOSFET is a new age product with a drain-source resistance of 190mohm at a gate-source voltage of 10V. The MOSFET has continuous drain current of 20.7A. It has a maximum gate-source voltage of 20V and drain-source voltage of 600V. It has a maximum power dissipation of 71W. The MOSFET has a driving voltage of 10V. It has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Ease of use
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V
• Field proven CoolMOS quality
• High efficiency and power density
• High reliability
• Low gate charge (Qg)
• Low specific on state resistance
• Operating temperature ranges between -55°C and 150°C
• Outstanding cost to performance
• Very low energy storage in output capacitance (Eoss) at 400V
Applications
• Adapter
• PC power
• Server power supplies
• Telecommunication
• PC power
• Server power supplies
• Telecommunication
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• JEDEC
• BS EN 61340-5-1:2007
• JEDEC
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 20.7 A |
Maximum Drain Source Voltage | 600 V |
Package Type | TO-220 FP |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 190 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3.9V |
Minimum Gate Threshold Voltage | 2.1V |
Maximum Power Dissipation | 34.5 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | 30 V |
Number of Elements per Chip | 1 |
Width | 4.85mm |
Typical Gate Charge @ Vgs | 87 nC @ 10 V |
Length | 10.65mm |
Maximum Operating Temperature | +150 °C |
Series | SPA20N60C3 |
Height | 16.15mm |
Minimum Operating Temperature | -55 °C |