- RS-stocknr.:
- 168-4482
- Fabrikantnummer:
- IXFP10N80P
- Fabrikant:
- IXYS
- RS-stocknr.:
- 168-4482
- Fabrikantnummer:
- IXFP10N80P
- Fabrikant:
- IXYS
Wetgeving en conformiteit
Productomschrijving
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 10 A |
Maximum Drain Source Voltage | 800 V |
Package Type | TO-220 |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 1.1 Ω |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 5.5V |
Maximum Power Dissipation | 300 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Length | 10.66mm |
Transistor Material | Si |
Number of Elements per Chip | 1 |
Width | 4.83mm |
Typical Gate Charge @ Vgs | 40 nC @ 10 V |
Maximum Operating Temperature | +150 °C |
Series | HiperFET, Polar |
Height | 9.15mm |
Minimum Operating Temperature | -55 °C |