SI4532DY Dual N/P-Channel MOSFET, 3.5 A, 3.9 A, 30 V, 8-Pin SOIC ON Semiconductor

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Enhancement Mode Dual MOSFET, Fairchild Semiconductor

Enhancement Mode Field Effect Transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Specificaties
Kenmerk Waarde
Channel Type N, P
Maximum Continuous Drain Current 3.5 A, 3.9 A
Maximum Drain Source Voltage 30 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 95 mΩ, 190 mΩ
Channel Mode Enhancement
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Length 5mm
Transistor Material Si
Width 4mm
Minimum Operating Temperature -55 °C
Typical Gate Charge @ Vgs 15 nC @ 10 V
Height 1.5mm
Maximum Operating Temperature +150 °C
2500 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (On a Reel of 2500)
0,356
(excl. BTW)
0,431
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
2500 +
0,356 €
890,00 €
*prijsindicatie
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