Dual N/P-Channel-Channel MOSFET, 1.5 A, 20 V, 6-Pin TSOP-6 Infineon BSL215CH6327XTSA1
- RS-stocknr.:
- 166-1086
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon
63000 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (op een rol 3000)
€ 0,155
(excl. BTW)
€ 0,188
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 3000 + | € 0,155 | € 465,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 166-1086
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
- Land van herkomst:
- MY
Productomschrijving
Infineon OptiMOS™ Dual Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 1.5 A |
| Maximum Drain Source Voltage | 20 V |
| Series | OptiMOS |
| Package Type | TSOP-6 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 250 mΩ, 280 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 0.6 V, 1.2V |
| Minimum Gate Threshold Voltage | 0.7 V, 1.2V |
| Maximum Power Dissipation | 500 mW |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -12 V, +12 V |
| Transistor Material | Si |
| Length | 2.9mm |
| Width | 1.6mm |
| Number of Elements per Chip | 2 |
| Maximum Operating Temperature | +150 °C |
| Typical Gate Charge @ Vgs | 0.73 nC @ 4.5 V, 3 nC @ 5 V |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.1V |
| Height | 1mm |
- RS-stocknr.:
- 166-1086
- Fabrikantnummer:
- BSL215CH6327XTSA1
- Fabrikant:
- Infineon