Dual N-Channel MOSFET, 800 mA, 20 V, 6-Pin SOT-666 Nexperia PMDT290UNE,115

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Datasheets

MOSFET Transistors, NXP Semiconductors

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	800 mA
Maximum Drain Source Voltage	20 V
Package Type	SOT-666
Mounting Type	Surface Mount
Pin Count	6
Maximum Drain Source Resistance	380 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	0.95V
Minimum Gate Threshold Voltage	0.5V
Maximum Power Dissipation	1.09 W
Transistor Configuration	Isolated
Maximum Gate Source Voltage	-8 V, +8 V
Number of Elements per Chip	2
Maximum Operating Temperature	+150 °C
Width	1.3mm
Transistor Material	Si
Length	1.7mm
Typical Gate Charge @ Vgs	0.45 nC @ 4.5 V
Height	0.6mm
Minimum Operating Temperature	-55 °C