N-Channel MOSFET, 130 A, 100 V, 3-Pin D2PAK Infineon IRFS4310TRLPBF

RS-stocknr.:: 165-8291
Fabrikantnummer:: IRFS4310TRLPBF
Fabrikant:: Infineon

N-Channel MOSFET, 130 A, 100 V, 3-Pin D2PAK Infineon IRFS4310TRLPBF

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RS-stocknr.:: 165-8291
Fabrikantnummer:: IRFS4310TRLPBF
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Land van herkomst:: CN

Productomschrijving

N-Channel Power MOSFET 100V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	130 A
Maximum Drain Source Voltage	100 V
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	7 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	300 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Transistor Material	Si
Typical Gate Charge @ Vgs	170 nC @ 10 V
Width	11.3mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C
Height	4.83mm
Series	HEXFET

RS-stocknr.:: 165-8291
Fabrikantnummer:: IRFS4310TRLPBF
Fabrikant:: Infineon