IPD70N10S3L12ATMA1 N-Channel MOSFET, 70 A, 100 V OptiMOS T, 3-Pin DPAK Infineon

  • RS-stocknr. 165-7524
  • Fabrikantnummer IPD70N10S3L12ATMA1
  • Fabrikant Infineon
Datasheets
Wetgeving en conformiteit
Conform
Land van herkomst: SG
Productomschrijving

Infineon OptiMOS™T Power MOSFETs

OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N
Maximum Continuous Drain Current 70 A
Maximum Drain Source Voltage 100 V
Package Type DPAK (TO-252)
Mounting Type Surface Mount
Pin Count 3
Maximum Drain Source Resistance 15.2 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 2.4V
Minimum Gate Threshold Voltage 1.2V
Maximum Power Dissipation 125 W
Transistor Configuration Single
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 1
Length 6.5mm
Typical Gate Charge @ Vgs 59 nC @ 10 V
Minimum Operating Temperature -55 °C
Width 6.22mm
Series OptiMOS T
Maximum Operating Temperature +175 °C
Transistor Material Si
Height 2.3mm
10000 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (On a Reel of 2500)
0,66
(excl. BTW)
0,80
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
2500 +
0,66 €
1.650,00 €
*prijsindicatie
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