N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STMicroelectronics STH110N10F7-2

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Datasheets

STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.

MOSFET Transistors, STMicroelectronics

Kenmerk	Waarde
Channel Type	N
Maximum Continuous Drain Current	110 A
Maximum Drain Source Voltage	100 V
Package Type	H2PAK
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	6.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	2.5V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Width	10.4mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	72 nC @ 10 V
Length	15.8mm
Transistor Material	Si
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Series	STripFET H7
Height	4.8mm