- RS-stocknr.:
- 165-5912
- Fabrikantnummer:
- IRF7105TRPBF
- Fabrikant:
- Infineon
4000 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (op een rol 4000)
€ 0,253
(excl. BTW)
€ 0,306
(incl. BTW)
Aantal stuks | Per stuk | Per reel* |
4000 - 4000 | € 0,253 | € 1.012,00 |
8000 + | € 0,24 | € 960,00 |
*prijsindicatie |
- RS-stocknr.:
- 165-5912
- Fabrikantnummer:
- IRF7105TRPBF
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Productomschrijving
Dual N/P-Channel Power MOSFET, Infineon
Infineons dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N, P |
Maximum Continuous Drain Current | 2.3 A, 3.5 A |
Maximum Drain Source Voltage | 25 V |
Series | HEXFET |
Package Type | SOIC |
Mounting Type | Surface Mount |
Pin Count | 8 |
Maximum Drain Source Resistance | 160 mΩ, 400 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 3V |
Minimum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 2 W |
Transistor Configuration | Isolated |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 10 nC @ 10 V, 9.4 nC @ 10 V |
Number of Elements per Chip | 2 |
Length | 5mm |
Width | 4mm |
Transistor Material | Si |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Height | 1.5mm |
- RS-stocknr.:
- 165-5912
- Fabrikantnummer:
- IRF7105TRPBF
- Fabrikant:
- Infineon