IRF7105TRPBF Dual N/P-Channel MOSFET, 2.3 A, 3.5 A, 25 V HEXFET, 8-Pin SOIC Infineon

  • RS-stocknr. 165-5912
  • Fabrikantnummer IRF7105TRPBF
  • Fabrikant Infineon
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Dual N/P-Channel Power MOSFET, Infineon

Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specificaties
Kenmerk Waarde
Channel Type N, P
Maximum Continuous Drain Current 2.3 A, 3.5 A
Maximum Drain Source Voltage 25 V
Package Type SOIC
Mounting Type Surface Mount
Pin Count 8
Maximum Drain Source Resistance 160 mΩ, 400 mΩ
Channel Mode Enhancement
Maximum Gate Threshold Voltage 3V
Minimum Gate Threshold Voltage 1V
Maximum Power Dissipation 2 W
Transistor Configuration Isolated
Maximum Gate Source Voltage -20 V, +20 V
Number of Elements per Chip 2
Minimum Operating Temperature -55 °C
Length 5mm
Transistor Material Si
Width 4mm
Typical Gate Charge @ Vgs 9.4 nC @ 10 V, 10 nC @ 10 V
Height 1.5mm
Series HEXFET
Maximum Operating Temperature +150 °C
4000 op voorraad - levertijd is 1 werkdag(en).
Prijs Each (On a Reel of 4000)
0,237
(excl. BTW)
0,287
(incl. BTW)
Aantal stuks
Per stuk
Per reel*
4000 +
0,237 €
948,00 €
*prijsindicatie