- RS-stocknr.:
- 165-5164
- Fabrikantnummer:
- IPI111N15N3GAKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 165-5164
- Fabrikantnummer:
- IPI111N15N3GAKSA1
- Fabrikant:
- Infineon
Wetgeving en conformiteit
Vrijgesteld
- Land van herkomst:
- CN
Productomschrijving
Infineon OptiMOS™3 Power MOSFETs, 100V and over
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Specificaties
Kenmerk | Waarde |
---|---|
Channel Type | N |
Maximum Continuous Drain Current | 83 A |
Maximum Drain Source Voltage | 150 V |
Package Type | I2PAK (TO-262) |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 10.8 mΩ |
Channel Mode | Enhancement |
Maximum Gate Threshold Voltage | 4V |
Minimum Gate Threshold Voltage | 2V |
Maximum Power Dissipation | 214 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -20 V, +20 V |
Typical Gate Charge @ Vgs | 41 nC @ 10 V |
Length | 10.36mm |
Transistor Material | Si |
Maximum Operating Temperature | +175 °C |
Number of Elements per Chip | 1 |
Width | 4.52mm |
Minimum Operating Temperature | -55 °C |
Series | OptiMOS 3 |
Height | 9.45mm |