N-Channel MOSFET, 66 A, 850 V, 3-Pin PLUS247 IXYS IXFX66N85X
- RS-stocknr.:
- 146-4380
- Fabrikantnummer:
- IXFX66N85X
- Fabrikant:
- IXYS
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 146-4380
- Fabrikantnummer:
- IXFX66N85X
- Fabrikant:
- IXYS
Datasheets
Wetgeving en conformiteit
Productomschrijving
The 850V Ultra-Junction X-Class Power MOSFETs with fast body diodes represent a new power semiconductor product line from IXYS Corporation. These rugged devices display the lowest on-state resistances in the industry, enabling very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, the new 850V devices exhibit the lowest on-state resistances (33 milliohm in the SOT-227 package and 41 milliohm in the PLUS264, for instance), along with low gate charges and superior dv/dt performance.
Ultra low on-resistance RDS(ON) and gate charge Qg
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Fast body diode
dv/dt ruggedness
Avalanche rated
Low package inductance
International standard packages
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 66 A |
| Maximum Drain Source Voltage | 850 V |
| Package Type | PLUS247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 65 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5.5V |
| Minimum Gate Threshold Voltage | 3.5V |
| Maximum Power Dissipation | 1.25 kW |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Number of Elements per Chip | 1 |
| Typical Gate Charge @ Vgs | 230 nC @ 10 V |
| Maximum Operating Temperature | +150 °C |
| Length | 16.13mm |
| Width | 5.21mm |
| Series | HiperFET |
| Minimum Operating Temperature | -55 °C |
| Forward Diode Voltage | 1.4V |
| Height | 21.34mm |