Dual N/P-Channel-Channel MOSFET, 2.1 A, 3.4 A, 30 V, 6-Pin TSOT-26 Diodes Inc DMG6602SVT-7
- RS-stocknr.:
- 121-9598
- Fabrikantnummer:
- DMG6602SVT-7
- Fabrikant:
- DiodesZetex
75000 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (op een rol 3000)
€ 0,285
(excl. BTW)
€ 0,345
(incl. BTW)
| Aantal stuks | Per stuk | Per reel* |
| 3000 + | € 0,285 | € 855,00 |
| *prijsindicatie | ||
- RS-stocknr.:
- 121-9598
- Fabrikantnummer:
- DMG6602SVT-7
- Fabrikant:
- DiodesZetex
Datasheets
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
Dual N/P-Channel MOSFET, Diodes Inc.
MOSFET Transistors, Diodes Inc.
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N, P |
| Maximum Continuous Drain Current | 2.1 A, 3.4 A |
| Maximum Drain Source Voltage | 30 V |
| Package Type | TSOT-26 |
| Mounting Type | Surface Mount |
| Pin Count | 6 |
| Maximum Drain Source Resistance | 100 mΩ, 140 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 3V |
| Maximum Power Dissipation | 1.27 W |
| Transistor Configuration | Isolated |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Number of Elements per Chip | 2 |
| Width | 1.6mm |
| Length | 2.9mm |
| Typical Gate Charge @ Vgs | 7 nC @ 10 V, 9 nC @ 10 V |
| Transistor Material | Si |
| Maximum Operating Temperature | +150 °C |
| Height | 0.9mm |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 121-9598
- Fabrikantnummer:
- DMG6602SVT-7
- Fabrikant:
- DiodesZetex