N-Channel MOSFET, 88 A, 300 V, 3-Pin TO-247 IXYS IXFH88N30P
- RS-stocknr.:
- 193-559
- Fabrikantnummer:
- IXFH88N30P
- Fabrikant:
- IXYS
20 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk
€ 13,43
(excl. BTW)
€ 16,25
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 5 | € 13,43 |
| 6 - 14 | € 12,34 |
| 15 + | € 11,72 |
- RS-stocknr.:
- 193-559
- Fabrikantnummer:
- IXFH88N30P
- Fabrikant:
- IXYS
Datasheets
Wetgeving en conformiteit
Productomschrijving
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Specificaties
Kenmerk | Waarde |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 88 A |
| Maximum Drain Source Voltage | 300 V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Pin Count | 3 |
| Maximum Drain Source Resistance | 40 mΩ |
| Channel Mode | Enhancement |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Power Dissipation | 600 W |
| Transistor Configuration | Single |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Width | 5.3mm |
| Maximum Operating Temperature | +150 °C |
| Number of Elements per Chip | 1 |
| Length | 16.26mm |
| Typical Gate Charge @ Vgs | 180 nC @ 10 V |
| Transistor Material | Si |
| Height | 21.46mm |
| Minimum Operating Temperature | -55 °C |
| Series | HiperFET, Polar |