- RS-stocknr.:
- 877-2905
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 31/10/2024, met een levertijd van 2 à 3 werkdagen.
Prijs Per stuk (in een verpakking 5)
€ 7,136
(excl. BTW)
€ 8,635
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
5 - 5 | € 7,136 | € 35,68 |
10 - 95 | € 6,066 | € 30,33 |
100 - 495 | € 4,852 | € 24,26 |
500 - 995 | € 4,316 | € 21,58 |
1000 + | € 3,646 | € 18,23 |
*prijsindicatie |
- RS-stocknr.:
- 877-2905
- Fabrikantnummer:
- STGW30NC60KD
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 200 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 24.45mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |
Energy Rating | 1435mJ |
Gate Capacitance | 2170pF |