- RS-stocknr.:
- 862-9347
- Fabrikantnummer:
- ISL9V2040D3ST
- Fabrikant:
- onsemi
2335 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een verpakking 5)
€ 0,732
(excl. BTW)
€ 0,886
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
5 + | € 0,732 | € 3,66 |
*prijsindicatie |
- RS-stocknr.:
- 862-9347
- Fabrikantnummer:
- ISL9V2040D3ST
- Fabrikant:
- onsemi
Wetgeving en conformiteit
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 10 A |
Maximum Collector Emitter Voltage | 450 V |
Maximum Gate Emitter Voltage | ±14V |
Maximum Power Dissipation | 130 W |
Package Type | DPAK (TO-252) |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 6.73 x 6.22 x 2.39mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +175 °C |