- RS-stocknr.:
- 860-7450
- Fabrikantnummer:
- STGW30H60DFB
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 30/09/2024, met een levertijd van 2 à 3 werkdagen.
Prijs Per stuk (in een verpakking 2)
€ 3,48
(excl. BTW)
€ 4,21
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
2 - 8 | € 3,48 | € 6,96 |
10 - 18 | € 3,31 | € 6,62 |
20 - 48 | € 2,975 | € 5,95 |
50 - 98 | € 2,675 | € 5,35 |
100 + | € 2,545 | € 5,09 |
*prijsindicatie |
- RS-stocknr.:
- 860-7450
- Fabrikantnummer:
- STGW30H60DFB
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 60 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 260 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 15.75 x 5.15 x 20.15mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |