onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount
- RS-stocknr.:
- 807-8758
- Fabrikantnummer:
- ISL9V3040D3ST
- Fabrikant:
- onsemi
25 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een verpakking 5)
€ 1,996
(excl. BTW)
€ 2,415
(incl. BTW)
| Aantal stuks | Per stuk | Per pak* |
| 5 - 5 | € 1,996 | € 9,98 |
| 10 - 95 | € 1,682 | € 8,41 |
| 100 - 245 | € 1,27 | € 6,35 |
| 250 - 495 | € 1,232 | € 6,16 |
| 500 + | € 1,076 | € 5,38 |
| *prijsindicatie | ||
- RS-stocknr.:
- 807-8758
- Fabrikantnummer:
- ISL9V3040D3ST
- Fabrikant:
- onsemi
Wetgeving en conformiteit
Productomschrijving
Discrete IGBTs, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 21 A |
| Maximum Collector Emitter Voltage | 300 V |
| Maximum Gate Emitter Voltage | ±10V |
| Maximum Power Dissipation | 150 W |
| Package Type | DPAK (TO-252) |
| Mounting Type | Surface Mount |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 6.73 x 6.22 x 2.39mm |
| Maximum Operating Temperature | +175 °C |
| Minimum Operating Temperature | -40 °C |