- RS-stocknr.:
- 791-7416
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
4 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een verpakking 2)
€ 11,345
(excl. BTW)
€ 13,727
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
2 - 8 | € 11,345 | € 22,69 |
10 - 28 | € 9,155 | € 18,31 |
30 - 58 | € 8,17 | € 16,34 |
60 - 118 | € 7,485 | € 14,97 |
120 + | € 6,465 | € 12,93 |
*prijsindicatie |
- RS-stocknr.:
- 791-7416
- Fabrikantnummer:
- IXGH48N60B3
- Fabrikant:
- IXYS
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 280 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 300 W |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 40kHz |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |