STMicroelectronics STGW30H60DFB IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 168-8808
- Fabrikantnummer:
- STGW30H60DFB
- Fabrikant:
- STMicroelectronics
tijdelijk niet op voorraad – nieuwe voorraad verwacht op 21/10/2024, met een levertijd van 2 à 3 werkdagen.
Toegevoegd
Prijs Per stuk (in een tube 30)
€ 2,668
(excl. BTW)
€ 3,228
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 30 - 30 | € 2,668 | € 80,04 |
| 60 - 120 | € 2,054 | € 61,62 |
| 150 + | € 1,884 | € 56,52 |
| *prijsindicatie | ||
- RS-stocknr.:
- 168-8808
- Fabrikantnummer:
- STGW30H60DFB
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 60 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 260 W |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 15.75 x 5.15 x 20.15mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +175 °C |