STMicroelectronics STGF10NC60KD IGBT, 9 A 600 V, 3-Pin TO-220FP, Through Hole
- RS-stocknr.:
- 168-7163
- Fabrikantnummer:
- STGF10NC60KD
- Fabrikant:
- STMicroelectronics
Sorry, we konden onze voorraadniveaus nu niet controleren. Probeer de pagina te vernieuwen.
Toegevoegd
Prijs Per stuk (in een tube 50)
€ 0,965
(excl. BTW)
€ 1,168
(incl. BTW)
| Aantal stuks | Per stuk | Per tube* |
| 50 - 50 | € 0,965 | € 48,25 |
| 100 - 200 | € 0,917 | € 45,85 |
| 250 - 450 | € 0,833 | € 41,65 |
| 500 + | € 0,821 | € 41,05 |
| *prijsindicatie | ||
- RS-stocknr.:
- 168-7163
- Fabrikantnummer:
- STGF10NC60KD
- Fabrikant:
- STMicroelectronics
Wetgeving en conformiteit
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 9 A |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 25 W |
| Package Type | TO-220FP |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Switching Speed | 1MHz |
| Transistor Configuration | Single |
| Dimensions | 10.4 x 4.6 x 16.4mm |
| Minimum Operating Temperature | -55 °C |
| Maximum Operating Temperature | +150 °C |