- RS-stocknr.:
- 168-6463
- Fabrikantnummer:
- STGE200NB60S
- Fabrikant:
- STMicroelectronics
- RS-stocknr.:
- 168-6463
- Fabrikantnummer:
- STGE200NB60S
- Fabrikant:
- STMicroelectronics
Datasheets
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 200 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | ISOTOP |
Mounting Type | Panel Mount |
Channel Type | N |
Pin Count | 4 |
Transistor Configuration | Single |
Dimensions | 38.2 x 25.5 x 9.1mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +150 °C |