- RS-stocknr.:
- 168-4435
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS
30 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Per stuk (in een tube 30)
€ 15,59
(excl. BTW)
€ 18,86
(incl. BTW)
Aantal stuks | Per stuk | Per tube* |
30 + | € 15,59 | € 467,70 |
*prijsindicatie |
- RS-stocknr.:
- 168-4435
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS
Datasheets
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 75 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Package Type | TO-247 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 16.26 x 5.3 x 21.46mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 168-4435
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS