Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263), Surface Mount

RS-stocknr.:: 166-1187
Fabrikantnummer:: IGB30N60H3ATMA1
Fabrikant:: Infineon

Infineon IGB30N60H3ATMA1 IGBT, 30 A 600 V, 3+Tab-Pin D2PAK (TO-263), Surface Mount

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RS-stocknr.:: 166-1187
Fabrikantnummer:: IGB30N60H3ATMA1
Fabrikant:: Infineon

Datasheets

Wetgeving en conformiteit

Vrijgesteld

Land van herkomst:: MY

Productomschrijving

Infineon TrenchStop IGBT Transistors, 600 and 650V

A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.

• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C

IGBT Discretes & Modules, Infineon

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Specificaties

Kenmerk	Waarde
Maximum Continuous Collector Current	30 A
Maximum Collector Emitter Voltage	600 V
Maximum Gate Emitter Voltage	±20V
Maximum Power Dissipation	187 W
Package Type	D2PAK (TO-263)
Mounting Type	Surface Mount
Channel Type	N
Pin Count	3+Tab
Transistor Configuration	Single
Dimensions	10.31 x 9.45 x 4.57mm
Gate Capacitance	1630pF
Energy Rating	1.55mJ
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-40 °C

RS-stocknr.:: 166-1187
Fabrikantnummer:: IGB30N60H3ATMA1
Fabrikant:: Infineon