- RS-stocknr.:
- 124-3701
- Fabrikantnummer:
- RJH60F3DPQ-A0#T0
- Fabrikant:
- Renesas Electronics
Op voorraad - levertijd 3 à 5 werkdagen.
Toegevoegd
Prijs Per stuk (in een verpakking 2)
€ 3,515
(excl. BTW)
€ 4,253
(incl. BTW)
Aantal stuks | Per stuk | Per pak* |
2 - 4 | € 3,515 | € 7,03 |
6 - 10 | € 3,33 | € 6,66 |
12 - 48 | € 3,145 | € 6,29 |
50 - 98 | € 2,705 | € 5,41 |
100 + | € 2,57 | € 5,14 |
*prijsindicatie |
- RS-stocknr.:
- 124-3701
- Fabrikantnummer:
- RJH60F3DPQ-A0#T0
- Fabrikant:
- Renesas Electronics
Wetgeving en conformiteit
- Land van herkomst:
- JP
Productomschrijving
IGBT Discretes, Renesas Electronics
IGBT Discretes & Modules
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 40 A |
Maximum Collector Emitter Voltage | 600 V |
Maximum Gate Emitter Voltage | ±30V |
Maximum Power Dissipation | 178.5 W |
Package Type | TO-247A |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Switching Speed | 1MHz |
Transistor Configuration | Single |
Dimensions | 15.94 x 5.02 x 21.13mm |
Maximum Operating Temperature | +150 °C |
Gate Capacitance | 1260pF |
- RS-stocknr.:
- 124-3701
- Fabrikantnummer:
- RJH60F3DPQ-A0#T0
- Fabrikant:
- Renesas Electronics