- RS-stocknr.:
- 194-596
- Fabrikantnummer:
- MUBW15-12A6K
- Fabrikant:
- IXYS
Niet meer leverbaar – bekijk hieronder eventuele alternatieven of neem contact op met onze Customer Service
- RS-stocknr.:
- 194-596
- Fabrikantnummer:
- MUBW15-12A6K
- Fabrikant:
- IXYS
Wetgeving en conformiteit
Productomschrijving
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 19 A |
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Configuration | 3 Phase Bridge |
Mounting Type | PCB Mount |
Channel Type | N |
Pin Count | 25 |
Transistor Configuration | 3 Phase |
Dimensions | 82 x 37.4 x 17.1mm |
Minimum Operating Temperature | -40 °C |
Maximum Operating Temperature | +125 °C |