IXYS IXGH40N120B2D1 IGBT, 75 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 192-988
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS
39 op voorraad - levertijd is 1 werkdag(en) (EU-voorraad)
18 op voorraad - levertijd is 3 à 5 werkdagen (UK-voorraad)
Toegevoegd
Prijs Per stuk
€ 18,19
(excl. BTW)
€ 22,01
(incl. BTW)
| Aantal stuks | Per stuk |
| 1 - 4 | € 18,19 |
| 5 - 19 | € 15,66 |
| 20 - 49 | € 14,99 |
| 50 - 99 | € 13,05 |
| 100 + | € 12,74 |
- RS-stocknr.:
- 192-988
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS
Datasheets
Wetgeving en conformiteit
Productomschrijving
IGBT Discretes, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
|---|---|
| Maximum Continuous Collector Current | 75 A |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Gate Emitter Voltage | ±20V |
| Package Type | TO-247 |
| Mounting Type | Through Hole |
| Channel Type | N |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Dimensions | 16.26 x 5.3 x 21.46mm |
| Maximum Operating Temperature | +150 °C |
| Minimum Operating Temperature | -55 °C |
- RS-stocknr.:
- 192-988
- Fabrikantnummer:
- IXGH40N120B2D1
- Fabrikant:
- IXYS