- RS-stocknr.:
- 195-8770
- Fabrikantnummer:
- NXH100B120H3Q0STG
- Fabrikant:
- onsemi
- RS-stocknr.:
- 195-8770
- Fabrikantnummer:
- NXH100B120H3Q0STG
- Fabrikant:
- onsemi
Datasheets
Wetgeving en conformiteit
Productomschrijving
The NXH100B120H3Q0 is a power integrated module (PIM) containing a dual boost stage consisting of two 50A/1200V IGBTs, two 20A/1200V SiC diodes, and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
IGBT Specifications: VCE(SAT) = 1.77 V, ESW = 2200 uJ
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Fast IGBT with low VCE(SAT) for high efficiency
25 A / 1600 V Bypass and Anti−parallel Diodes
Low VF bypass diodes for excellent efficiency in bypass mode
SiC Rectifier Specification: VF = 1.44 V
SiC Diode for high speed switching
Solder pin and press-fit pin options available
Flexible mounting
Applications
MPPT Boost Stage
Battery Charger Boost Stage
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Collector Emitter Voltage | 1200 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 186 W |
Configuration | Dual |
Package Type | Q0BOOST |
Mounting Type | Surface Mount |
Channel Type | N |
Pin Count | 22 |
Transistor Configuration | Dual |
Dimensions | 66.2 x 32.8 x 11.9mm |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -40 °C |